J. Niedermeyr: search on Z-Library

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1

A 2000 V non-punchthrough IGBT with high ruggedness

T. Laska, G. Miller, J. Niedermeyr

Journal:

Solid-State Electronics

Year:

1992

Language:

english

File:

PDF, 314 KB

english, 1992

2

[Inst. Electr. Eng. Japan International Symposium on Power Semiconductor Devices and IC's - Kyoto, Japan (3-6 June 1998)] Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212) - 1200 V-trench-IGBT study with square short circuit SOA

Laska, T., Pfirsch, F., Hirler, F., Niedermeyr, J., Schaffer, C., Schmidt, T.

Year:

1998

Language:

english

File:

PDF, 586 KB

english, 1998

3

[IEEE 2008 International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM) - Smolenice, Slovakia (2008.10.12-2008.10.16)] 2008 International Conference on Advanced Semiconductor Devices and Microsystems - Destruction in the Active Part of an IGBT Chip Caused by Avalanche-Breakdown at the Edge Termination Structure

Knipper, U., Pfirsch, F., Raker, T., Niedermeyr, J., Wachutka, G.

Year:

2008

Language:

english

File:

PDF, 2.93 MB

english, 2008

4

[IEEE IC's (ISPSD) - Orlando, FL, USA (2008.05.18-2008.05.22)] 2008 20th International Symposium on Power Semiconductor Devices and IC's - Time-Periodic Avalanche Breakdown at the Edge Termination of Power Devices

Knipper, U., Wachutka, G., Pfirsch, F., Raker, T., Niedermeyr, J.

Year:

2008

Language:

english

File:

PDF, 212 KB

english, 2008

5

Altered significance of D'Amico risk classification in patients with prostate cancer linked to a familial breast cancer (kConFab) cohort

Bolton, Damien, Cheng, Yuan, Willems-Jones, Amber J., Li, Jason, Niedermeyr, Eveline, Mitchell, Gillian, Clouston, David, Lawrentschuk, Nathan, Sliwinski, Ania, Fox, Stephen, Thorne, Heather

Journal:

BJU International

Year:

2015

Language:

english

File:

PDF, 190 KB

english, 2015